Electric Field Modulation in the Channel by Lateral Thickness Distribution of High-k Films Formed on GaN HEMTs to Improve Breakdown Voltage
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Meguro-ku, Japan
2. Transmission Devices Laboratory, Sumitomo Electric Industries Ltd., Yokohama, Japan
Funder
New Energy and Industrial Technology Development Organization
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10106527/10070742.pdf?arnumber=10070742
Reference19 articles.
1. Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering
2. Simulation Study of Gate-Drain Leakage Current and Density of Polarization Charge at Heterojunction Interface in GaN HEMTs
3. Controlling resist thickness and etch depth for fabrication of 3D structures in electron-beam grayscale lithography
4. TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT
5. Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements
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5. First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system;Modelling and Simulation in Materials Science and Engineering;2024-03-08
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