High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

Author:

Leobandung E.,Nayakama H.,Mocuta D.,Miyamoto K.,Angyal M.,Meer H.V.,McStay K.,Ahsan I.,Allen S.,Azuma A.,Belyansky M.,Bentum R.-V.,Cheng J.,Chidambarrao D.,Dirahoui B.,Fukasawa M.,Gerhardt M.,Gribelyuk M.,Halle S.,Harifuchi H.,Harmon D.,Heaps-Nelson J.,Hichri H.,Ida K.,Inohara M.,Inoue K.,Jenkins K.,Kawamura T.,Kim B.,Ku S.-K.,Kumar M.,Lane S.,Liebmann L.,Logan R.,Melville I.,Miyashita K.,Mocuta A.,O'Neil P.,Ng M.-F.,Nogami T.,Nomura A.,Norris C.,Nowak E.,Ono M.,Panda S.,Penny C.,Radens C.,Ramachandran R.,Ray A.,Rhee S.-H.,Ryan D.,Shinohara T.,Sudo G.,Sugaya F.,Strane J.,Tan Y.,Tsou L.,Wang L.,Wirbeleit F.,Wu S.,Yamashita T.,Yan H.,Ye Q.,Yoneyama D.,Zamdmer N.,Zhong H.,Zhu H.,Zhu W.,Agnello P.,Bukofsky S.,Bronner G.,Crabb E.,Freeman G.,Huang S.-F.,Ivers T.,Kuroda H.,McHerron D.,Pellerin J.,Toyoshima Y.,Subbanna S.,Kepler N.,Su L.

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Review on analog/radio frequency performance of advanced silicon MOSFETs;Semiconductor Science and Technology;2017-11-16

2. Fully depleted SOI (FDSOI) technology;Science China Information Sciences;2016-04-25

3. Nanowire Volatile RAM as an Alternative to SRAM;ACM Journal on Emerging Technologies in Computing Systems;2015-09-21

4. 2-Port SRAM Bitcell Design;Robust SRAM Designs and Analysis;2012-04-09

5. Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and SixGe1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals;Defect and Diffusion Forum;2010-10

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