108-GHz-Bandwidth Compact InP-HBT Baseband Amplifier Module With Integrated DC-Block Functions
Author:
Affiliation:
1. NTT Device Technology Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi-shi, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10144810/10045758.pdf?arnumber=10045758
Reference13 articles.
1. Ultra thin low ESL and ultra wide broadband silicon capacitors
2. Over 2-Tb/s net bitrate single-carrier transmission based on > 130-GHz-bandwidth InP-DHBT baseband amplifier module;nakamura;Proc Eur Conf Exhib Opt Commun,2022
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1. Over 200-GHz-Bandwidth InP DHBT Baseband Amplifier ICs and Ultrabroadband Modules With 1-/0.8-mm Coaxial Connectors;IEEE Transactions on Microwave Theory and Techniques;2024-09
2. A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers;Electronics Letters;2024-03
3. Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks;physica status solidi (a);2023-11-22
4. Quad-Channel 100-GHz-Bandwidth InP- HBT-Based Linear Amplifier Module for High Symbol Rate Communications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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