Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks

Author:

Tsutsumi Takuya1ORCID,Sugiyama Hiroki1,Hamada Hiroshi1,Jyo Teruo1,Shiratori Yuta1,Hoshi Takuya1,Takahashi Hiroyuki1,Nakajima Fumito1

Affiliation:

1. NTT Device Technology Laboratories 1-3, Morinosato-Wakamiya Atsugi-shi Kanagawa 2430016 Japan

Abstract

Next‐generation “Beyond 5G (B5G)/6G” wireless network systems have been researched and developed for meeting the rapid growth of mobile traffic. A high‐yield fabrication process of InP‐based transistors and tera‐hertz monolithic integrated circuits with 300 GHz operation is reported, which is a candidate frequency for “Beyond 5G/6G” network systems. The main focus is on a high‐yield and reproductive fabrication process of InP‐based high electron mobility transistors (HEMTs) while revisiting previous studies. The DC and radio frequency characteristics of fabricated InP‐HEMTs from the viewpoint of integrating circuits are described. Then, high‐frequency performances of ft = 280 GHz and fmax = 860 GHz in the bias conditions of Vgs/Vds = 0.2/1.1 V with good uniformity are obtained. Finally, InP‐based 300 GHz‐band mixer and power amplifiers are introduced, to which a backside process is also applied for ensuring their stability and enhancing output power.

Funder

National Institute of Information and Communications Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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