Highly Linear Ka-Band CMOS Linear Power Amplifier Using T-Shape Linearizer With pMOS
Author:
Affiliation:
1. High Speed Electronics Technology Laboratory, Chungnam National University, Daejeon, South Korea
Funder
National Research Foundation of Korea (NRF) through the Korean Government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10213341/10124978.pdf?arnumber=10124978
Reference27 articles.
1. A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers
2. Single Transformer-Based Compact Doherty Power Amplifiers for 5G RF Phased-Array ICs
3. A 25-GHz Power Amplifier Using Three-Stage Antiphase Linearization in Bulk 65-nm CMOS Technology
4. A Wideband Class-AB Power Amplifier With 29–57-GHz AM–PM Compensation in 0.9-V 28-nm Bulk CMOS
5. Highly Linear mm-Wave CMOS Power Amplifier
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1. A Low-Power High-IP1dB Low-Noise Amplifier Using Large-Transistor and Class-AB Mode;IEEE Microwave and Wireless Technology Letters;2024-03
2. 32.2 A 24.25-to-29.5GHz Extremely Compact Doherty Power Amplifier with Differential-Breaking Phase Offset Achieving 23.7% PAEavg for 5G Base-Station Transceivers;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18
3. Ka-Band CMOS Stacked-FET Power Amplifier With Pre-Distorted Driver Stage for 5G Applications;IEEE Access;2024
4. A Highly Efficient, Linear Ka-Band SiGe HBT Cascode Power Amplifier With a Compact Lumped Element Coupled Line Impedance Inverting Balun;IEEE Transactions on Microwave Theory and Techniques;2024
5. Design of MMIC Based Ka-Band Power Amplifier Using 0.15um GaN for Satellite Communication;2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2023-07-07
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