A Study on Suppressing Surge Voltage of SiC MOSFET Using Digital Active Gate Driver-Reference-Cited by-同舟云学术

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A Study on Suppressing Surge Voltage of SiC MOSFET Using Digital Active Gate Driver

Published:2020-09-23 Issue: Volume: Page:
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Container-title:2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Takayama Hajime,Okuda Takafumi,Hikihara Takashi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9360228/9360248/09360264.pdf?arnumber=9360264

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate-Driving Performance Evaluation Based on a New Figure of Merit;Electronics;2024-02-01

2. One-Pulse Active Gate Control Method Capable of Reducing Both Surge Voltage and Switching Loss;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

3. Definition and Implementation of an EMI Figure of Merit for Switching Pattern in Power Converters;IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society;2022-10-17

4. A Study on Digital Active Gate Driving of DC-DC Converter for Suppressing Switching Surge Voltage;2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia);2022-05-15

5. Digital active gate drive of SiC MOSFETs for controlling switching behavior—Preparation toward universal digitization of power switching;International Journal of Circuit Theory and Applications;2021-09-05

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