Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 V-Reference-Cited by-同舟云学术

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Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 V

Published:2023-08-27 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
language:
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Author:

Liu Chia-Wei¹,Liu Yen-Wei¹,Ho Hsin-Jou¹,Wu Tian-Li¹

Affiliation:

1. National Yang Ming Chiao Tung University,International College of Semiconductor Technology,Taiwan

Funder

National Science and Technology Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10261884/10261892/10261913.pdf?arnumber=10261913

Reference11 articles.

1. Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

2. Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer

3. GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

4. Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

5. AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Study of Normally-on Power GaN HEMTs in QST Substrate with High Breakdown Voltage;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22

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