The Study of Normally-on Power GaN HEMTs in QST Substrate with High Breakdown Voltage-Reference-Cited by-同舟云学术

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The Study of Normally-on Power GaN HEMTs in QST Substrate with High Breakdown Voltage

Published:2024-04-22 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
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Author:

Chen Pei-Tien¹,Chuang Chia-Hao¹,Liu An-Chen¹,Kuo Hao-Chung¹

Affiliation:

1. National Yang Ming Chiao Tung University,Department of Photonics and Institute of Electro-Optical Engineering,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10546337/10546338/10546378.pdf?arnumber=10546378

Reference5 articles.

1. Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

2. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

3. Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 V

4. 650 V p-GaN Gate Power HEMTs on 200 mm Engineered Substrates

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