Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates-Reference-Cited by-同舟云学术

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

Published:2017-11-16 Issue:12 Volume:10 Page:126501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Anderson Travis J.,Koehler Andrew D.,Tadjer Marko J.,Hite Jennifer K.,Nath Anindya,Mahadik Nadeemullah A.,Aktas Ozgur,Odnoblyudov Vladimir,Basceri Cem,Hobart Karl D.,Kub Francis J.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=12/a=126501/pdf

Reference12 articles.

1. Manufacturing Challenges of GaN-on-Si HEMTs in a 200 mm CMOS Fab

2. Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106cm−2 range by novel two-side hydride vapor-phase epitaxial growth

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