Dynamic ON-Resistance Characterization of GaN HEMT Under Soft-Switching Condition-Reference-Cited by-同舟云学术

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Dynamic ON-Resistance Characterization of GaN HEMT Under Soft-Switching Condition

Published:2021-11-07 Issue: Volume: Page:
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Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Zhao Tianyu,Burgos Rolando,Xu Jing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645123.pdf?arnumber=9645123

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution;IEEE Transactions on Power Electronics;2024-01

2. Reverse Current Stress Induced Dynamic R_on of GaN HEMTs in Soft-Switching Mode;IEEE Electron Device Letters;2023-09

3. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

4. GaN and SiC Device Characterization by a Dedicated Embedded Measurement System;Electronics;2023-03-25

5. Variable Switching Frequency DPWM for ZVS in AC Motor Drive Fed by Two Paralleled SiC Inverters With Coupled Inductors;IEEE Transactions on Power Electronics;2023

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