Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)-Reference-Cited by-同舟云学术

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Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)

Published:2021-11-07 Issue: Volume: Page:
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Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Jang Seung Yup,Isukapati Sundar Babu,Lynch Justin,Sung Woongje

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645097.pdf?arnumber=9645097

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. First Demonstration of 600 V 4H-SiC Lateral Bi-Directional Metal-Oxide-Semiconductor Field-Effect Transistor (LBiDMOS);2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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