First Demonstration of 600 V 4H-SiC Lateral Bi-Directional Metal-Oxide-Semiconductor Field-Effect Transistor (LBiDMOS)
Author:
Affiliation:
1. College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute,Albany,NY,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147546.pdf?arnumber=10147546
Reference8 articles.
1. Design methodologies and fabrication of 4H-SiC lateral Schottky barrier diode on thin RESURF layer
2. Edge Termination and Peripheral Designs for SiC High-Voltage (HV) Lateral MOSFETs for Power IC Technology
3. Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)
4. Monolithic 4-Terminal 1.2kV/20A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes;han;IEEE Int Symp Power Semiconductor Devices and ICs (ISPSD),0
5. Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications
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