Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs-Reference-Cited by-同舟云学术

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Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs

Published:2021-11-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Bashar Erfan,Wu Ruizhu,Agbo Nereus,Mendy Simon,Jahdi Saeed,Gonzalez Jose-Ortiz,Alatise Olayiwola

Funder

Engineering and Physical Sciences Research Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645092.pdf?arnumber=9645092

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors;Solid State Phenomena;2024-08-26

2. Positive Bias Temperature Instability in SiC-Based Power MOSFETs;Micromachines;2024-06-30

3. High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs;IEEE Open Journal of Industry Applications;2024

4. A Hierarchical Driving Control Strategy Applied to Parallel SiC MOSFETs;Electronics;2023-12-22

5. A Control Strategy for SiC-Based High-Frequency High-Power Train Auxiliary Inverter;2023 5th International Academic Exchange Conference on Science and Technology Innovation (IAECST);2023-12-08

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