Optimization of In-situ and Ex-situ doped p+ Passivating Contact for High Efficiency p-TOPCon Solar Cell Application-Reference-Cited by-同舟云学术

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Optimization of In-situ and Ex-situ doped p+ Passivating Contact for High Efficiency p-TOPCon Solar Cell Application

Published:2021-06-20 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
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Author:

Choi Wook-Jin,Madani Keeya,Huang Ying-Yuan,Jain Aditi,Ok Young-Woo,Upadhyaya Min Gu Kang Vijaykumar D.,Choi Sungjin,Rohatgi Ajeet

Funder

Solar Energy Technologies Office

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9518357/9518392/09518759.pdf?arnumber=9518759

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of APCVD BSG and POCl₃ Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication;IEEE Journal of Photovoltaics;2024-09

2. Current status and challenges for hole-selective poly-silicon based passivating contacts;Applied Physics Reviews;2024-02-09

3. Rapid Thermal Annealing of p-Type Polysilicon Passivated Contacts Silicon Solar Cells;IEEE Journal of Photovoltaics;2023-05

4. TCAD based numerical exploration of industrially feasible tunnel oxide passivated contact on p-type silicon;Solar Energy;2023-03

5. Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact;IEEE Transactions on Electron Devices;2022-05

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