Rapid Thermal Annealing of p-Type Polysilicon Passivated Contacts Silicon Solar Cells
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
2. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
Funder
National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/5503869/10106106/10044568-aam.pdf
Reference54 articles.
1. A passivating contact for silicon solar cells formed during a single firing thermal annealing
2. In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells
3. Rapid‐Thermal‐Annealing‐Induced Passivation Degradation and Recovery of Polysilicon Passivated Contact with Czochralski and Cast Multicrystalline Silicon Substrates
4. X-ray photoelectron spectroscopy of thermally treated silica (SiO2) surfaces
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