In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells

Author:

Yang Qing,Liao Mingdun,Wang Zhixue,Zheng Jingming,lin Yiran,Guo Xueqi,Rui Zhe,Huang Dandan,Lu Linna,Feng Mengmeng,Cheng Peihong,Shou Chunhui,Zeng Yuheng,Yan Baojie,Ye Jichun

Funder

National Key R&D Program of China

Zhejiang Energy Group

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation

Key Research and Development Program of Zhejiang Province

Ningbo “Innovation 2025” Major Project

Key Project of Zhejiang Province

Natural Science Foundation of Ningbo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. A passivated rear contact for high-efficiency n-type silicon solar cells enabling high Vocs and FF 82%;Feldmann,2013

2. n-Type Si solar cells with passivating electron contact: identifying sources for efficiency limitations by wafer thickness and resistivity variation;Richter;Sol. Energy Mater. Sol. Cells,2017

3. A simple method for pinhole detection in carrier selective POLO-junctions for high efficiency silicon solar cells;Tetzlaff;Sol. Energy Mater. Sol. Cells,2017

4. Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD;Nandakumar;Prog. Photovoltaics Res. Appl.,2018

5. Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W;Chen;Prog. Photovoltaics Res. Appl.,2019

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