Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact
Author:
Affiliation:
1. Department of Electronics and Electrical Engineering, Keio University, Yokohama, Kanagawa, Japan
Funder
VLSI Design and Education Center (VDEC), University of Tokyo, in collaboration with Synopsys, Inc
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9761777/09744478.pdf?arnumber=9744478
Reference20 articles.
1. Numerical analysis of tunnel oxide passivated contact solar cell performances for dielectric thin film materials and bulk properties
2. 24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design
3. Improved quantitative description of Auger recombination in crystalline silicon
4. Bifacial PERC Solar Cell Designs: Bulk and Rear Properties and Illumination Condition
5. Optimization of Front Diffusion Profile in Bifacial Interdigitated Back Contact Solar Cell
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1. Review: Numerical simulation approaches of crystalline‐Si photovoltaics;Energy Science & Engineering;2023-07-24
2. On-Chip Carrier-Selective Contact Photovoltaic Cell;IEEE Transactions on Electron Devices;2023-04
3. Optimization of Passivation Layer on the Front Surface of N-Type Topcon Solar Cells;2023
4. Back-Contact Interdigitated Carrier-Selective Cell: Numerical Demonstration of 30 mW/cm² Output Power Density in Standard Albedo Condition;IEEE Transactions on Electron Devices;2022-12
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