AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology-Reference-Cited by-同舟云学术

AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Chen P. S.¹,Lee Y. W.¹,Huang D. S.¹,Chen S. C.¹,Cheng C. F.¹,Lee J. H.¹,He Jun¹

Affiliation:

1. Taiwan Semiconductor Manufacturing Company, Ltd,Advanced Technology Quality & Reliability Division,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764512.pdf?arnumber=9764512

Reference7 articles.

1. The physical mechanism investigation between HK/IL gate stack breakdown and time-dependent oxygen vacancy trap generation in FinFET devices

2. Mechanism for stress‐induced leakage currents in thin silicon dioxide films

3. Structural, electronic, and dielectric properties of amorphous hafnium silicates

4. Fundamental understanding and optimization of PBTI in nFETs with SiO2/HfO2 gate stack

5. The physical explanation of TDDB power law lifetime model through oxygen vacancy trap investigations in HKMG NMOS FinFET devices

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