Structural, electronic, and dielectric properties of amorphous hafnium silicates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3664780
Reference26 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
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3. Dielectric constant enhancement due to Si incorporation into HfO2
4. High-κ gate dielectrics: Current status and materials properties considerations
5. Characterization of the Ultrathin $\hbox{HfO}_{2}$ and Hf-Silicate Films Grown by Atomic Layer Deposition
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