Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si-Reference-Cited by-同舟云学术

Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si

Published:2023-05 Issue:5 Volume:71 Page:1945-1956
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Yamaguchi Yutaro¹^ORCID,Oishi Toshiyuki²^ORCID

Affiliation:

1. Information Technology Research and Development Center, Mitsubishi Electric Corporation, Kamakura, Japan

2. Department of Electronic Engineering, Saga University, Saga, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/10120630/10014639.pdf?arnumber=10014639

Reference31 articles.

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2. CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

3. A fully-integrated S/C band transmitter in 45 nm CMOS/ 0.2gm GaN heterogeneous technology;larue;Proc IEEE Compound Semiconductor Integr Circuit Symp (CSICS),2017

4. High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate

5. Simulation study of gate leakage current under three-terminal operation in AlGaN/GaN HEMTs;oishi;Proc 10th Top Workshop Heterostructure Microelectron (TWHM),2013

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