<i>S</i>-Band Micromechanical Resonant Impedance Transformers Based on Aluminum Nitride FBARs-Reference-Cited by-同舟云学术

S-Band Micromechanical Resonant Impedance Transformers Based on Aluminum Nitride FBARs

Published:2023-10 Issue:10 Volume:71 Page:4193-4205
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Huang Yan-Ming¹,Chang Chin-Yu²^ORCID,Hsu Tzu-Hsuan¹^ORCID,Ho Yenshih³^ORCID,Chen Yung-Hsiang³,Pradeep Yelehanka R.⁴,Chand Rakesh⁴^ORCID,Li Sheng-Shian⁵^ORCID,Fang Weileun⁵^ORCID,Li Ming-Huang¹^ORCID

Affiliation:

1. Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, Taiwan

2. Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan

3. Vanguard International Semiconductor Corporation, Hsinchu, Taiwan

4. Vanguard International Semiconductor Corporation Singapore Pte. Ltd, Tampines, Singapore

5. Institute of NanoEngineering and MicroSystems and the Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, Taiwan

Funder

Vanguard International Semiconductor Corporation Joint Development Project

Young Scholar Fellowship Program of Ministry of Science and Technology of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/10273174/10097634.pdf?arnumber=10097634

Reference52 articles.

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