Frequency Scaling of Passive Voltage Gain in 1-Port VHF Quartz Resonators-Reference-Cited by-同舟云学术

Frequency Scaling of Passive Voltage Gain in 1-Port VHF Quartz Resonators

Published:2022-06 Issue:3 Volume:31 Page:338-347
ISSN:1057-7157
Container-title:Journal of Microelectromechanical Systems
language:
Short-container-title:J. Microelectromech. Syst.

Author:

Galanko Klemash Mary E.¹^ORCID,Bedair Sarah S.¹^ORCID,Kiebala Tobias M.²,Diamond Daniel A.³,Rudy Ryan Q.¹^ORCID,Tseng Victor Farm-Guoo¹

Affiliation:

1. U.S. Army Research Laboratory, Adelphi, MD, USA

2. Department of Mechanical Engineering, Rochester Institute of Technology, Rochester, NY, USA

3. Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA

Funder

Army Research Laboratory

Defense Advanced Research Projects Agency (DARPA) Microsystems Technology Office

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

http://xplorestaging.ieee.org/ielx7/84/9785947/09739694.pdf?arnumber=9739694

Reference28 articles.

1. A 6.1-nW Wake-Up Receiver Achieving −80.5-dBm Sensitivity Via a Passive Pseudo-Balun Envelope Detector

2. Nanowatt-Level Wakeup Receiver Front Ends Using MEMS Resonators for Impedance Transformation

3. A Highly Reconfigurable Bit-Level Duty-Cycled TRF Receiver Achieving −106-dBm Sensitivity and 33-nW Average Power Consumption

4. A 22.3-nW, 4.55 cm2 Temperature-Robust Wake-Up Receiver Achieving a Sensitivity of −69.5 dBm at 9 GHz

5. A–108 dBm sensitivity, ?28 dB SIR, 130 nW to 41 ?W, digitally reconfigurable bit-level duty-cycled wakeup and data receiver;dissanayake;Proc IEEE Custom Integr Circuits Conf (CICC),2020

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of MEMS Matching Network for the Sensitivity of GHz Low-Power Wake-Up Receivers;Journal of Microelectromechanical Systems;2024

2. S-Band Micromechanical Resonant Impedance Transformers Based on Aluminum Nitride FBARs;IEEE Transactions on Microwave Theory and Techniques;2023-10