Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet-Reference-Cited by-同舟云学术

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Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Yeung Chun Wing,Zhang Jingyun,Chao Robin,Kwon Ohseong,Vega Reinaldo,Tsutsui Gen,Miao Xin,Zhang Chen,Sohn Chang-Woo,Moon Bum Ki,Razavieh Ali,Frougier Julien,Greene Andrew,Galatage Rohit,Li Juntao,Wang Miaomiao,Loubet Nicolas,Robison Robert,Basker Veeraraghavan,Yamashita Tenko,Guo Dechao

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614608.pdf?arnumber=8614608

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring Sheet Thickness Scaling and Substrate Orientation for Maximizing Nanosheet pFET Performance;IEEE Transactions on Electron Devices;2024-09

2. Study of Inner Spacer Module Process for Gate All Around Field Effect Transsistors;ECS Journal of Solid State Science and Technology;2024-08-01

3. Effects of Electron Quantum Confinement on Velocity Overshoot in Si Nanosheet Gate-All-Around FETs;IEEE Transactions on Electron Devices;2024-06

4. Multichannel Two-Dimensional MoS₂ Nanosheet MOSFET for Future Technology Node;IEEE Transactions on Electron Devices;2024-06

5. Improved RF Performance with Buried Power Rail and Contact over Active Gate in Nanosheet FETs;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

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