<tex>$0.63\ \mathrm{m}\Omega \text{cm}^{2}$</tex> / 1170 V 4H-SiC Super Junction V-Groove Trench MOSFET-Reference-Cited by-同舟云学术

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$0.63\ \mathrm{m}\Omega \text{cm}^{2}$ / 1170 V 4H-SiC Super Junction V-Groove Trench MOSFET

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Masuda T.,Saito Y.,Kumazawa T.,Hatayama T.,Harada S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614610.pdf?arnumber=8614610

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance;Micromachines;2024-05-23

4. 3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls;IEEE Electron Device Letters;2024-04

5. 1 kV Self-Aligned Vertical GaN Superjunction Diode;IEEE Electron Device Letters;2024-01

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