Author:
Bhatnagar M.,Nakanishi H.,Bothra S.,McLarty P.K.,Baliga B.J.
Cited by
17 articles.
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1. Investigation of Lateral Gallium Oxide MOSFET with Discrete Field Plate by Calibrated Numerical Simulation;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07
2. 1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability;IEEE Transactions on Electron Devices;2020-09
3. Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage;Materials Science in Semiconductor Processing;2019-07
4. High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination;Nanoscale Research Letters;2019-01-07
5. Breakdown Voltage;Fundamentals of Power Semiconductor Devices;2018-09-29