High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

Author:

Gao Yangyang,Li Ang,Feng Qian,Hu Zhuangzhuang,Feng Zhaoqing,Zhang Ke,Lu Xiaoli,Zhang Chunfu,Zhou Hong,Mu Wenxiang,Jia Zhitai,Zhang Jincheng,Hao Yue

Funder

National ey R&D Program of China

National Natural Science Foundation of China

111 Project

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Masataka H, Kohei S, Hisashi M, Yoshinao K, Akinori K, Akito K, Takekazu M, Shigenobu Y (2016) Recent progress in Ga2O3 power devices. Semicond Sci Technol 31:34001

2. Naoyuki U, Hideo H, Ryuta W, Hiroshi K (1997) Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals. Appl Phys Lett 70:3561–3563

3. Hideo A, Kengo N, Hidetoshi T, Natsuko A, Kazuhiko S, Yoichi Y, Growth of β-Ga2O3 (1997) single crystals by the edge-defined film fed growth method. Jpn J Appl Phys 47:8506–8509

4. Akito K, Kimiyoshi K, Shinya W, Yu Y, Takekazu M, Shigenobu Y (1997) High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth. Jpn J Appl Phys 55:1202A2

5. Sasaki K, Higashiwaki M, Kuramata A, Masui T, Yamakoshi S (1997) MBE grown Ga2O3 and its power device applications. JCrystl Growth 378:591–595

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