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Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage

  • Published:2019-07 Issue: Volume:97 Page:101-105
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Juan,Zhao Dan,Wang Wei,Zhang Xiaofan,Wang Yanfeng,Chang Xiaohui,Liu Zhangcheng,Fu Jiao,Wang Kaiyue,Wang Hong-Xing

Funder

Science and Technology Coordinating Innovative Engineering Projects of Shaanxi Province

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. High carrier mobility in single-crystal plasma-deposited diamond;Isberg;Science,2002

2. Electronic properties of CVD diamond;Nebel;Semicond. Sci. Technol.,2003

3. New unipolar switching power device figures of merit;Huang;IEEE Electron Device Lett.,2004

4. High-voltage single-crystal diamond diodes;Twitchen;IEEE Trans. Electron Devices,2004

5. Exceptionally high voltage Schottky diamond diodes and low boron doping;Butler;Semicond. Sci. Technol.,2003

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