Ternary Output Binary Neural Network With Zero-Skipping for MRAM-Based Digital In-Memory Computing
Author:
Affiliation:
1. Department of Electronics Engineering, Incheon National University, Incheon, South Korea
Funder
National Research Foundation (NRF) funded by the Korea Government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/10164655/10034809.pdf?arnumber=10034809
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1. 3T2M canted-type x SOT-MRAM: Field-free, high-energy-efficiency, and high-read-margin memory toward cache applications
2. A fully integrated analog ReRAM based 78.4TOPS/W compute-in-memory chip with fully parallel MAC computing;liu;IEEE ISSCC Dig Tech Papers,2020
3. A crossbar array of magnetoresistive memory devices for in-memory computing
4. A Novel RFID Authentication Protocol Based on Reconfigurable RRAM PUF
5. A Review of Binarized Neural Networks
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3. Machine Learning Hardware Implementation of Handwritten Digit Inference using Arduino and Ternary Output Binary Neural Network;2023 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia);2023-10-23
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