3T2M canted-type x SOT-MRAM: Field-free, high-energy-efficiency, and high-read-margin memory toward cache applications-Reference-Cited by-同舟云学术

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3T2M canted-type x SOT-MRAM: Field-free, high-energy-efficiency, and high-read-margin memory toward cache applications

Published:2022-12 Issue:4 Volume:7 Page:100508
ISSN:2468-2179
Container-title:Journal of Science: Advanced Materials and Devices
language:en
Short-container-title:Journal of Science: Advanced Materials and Devices

Author:

Liu Long^ORCID,Wang Di,Lin Huai,Zhao Xuefeng,Wang Ziwei,Xu Nuo^ORCID,Luo Xi,Gao Nan,Xue Xiaoyong,Pan Cheng,Xie Changqing,Xing Guozhong^ORCID

Funder

Institute of Microelectronics

National Natural Science Foundation of China

Chinese Academy of Sciences

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Materials Science (miscellaneous),Biomaterials,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Overview and outlook of emerging non-volatile memories

2. A computing-in-memory macro based on three-dimensional resistive random-access memory

3. A review of emerging non-volatile memory (NVM) technologies and applications

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM;IEEE Transactions on Electron Devices;2024-07

2. Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance;IEEE Magnetics Letters;2024

3. Tilted magnetic anisotropy-tailored spin torque nano-oscillators for neuromorphic computing;Applied Physics Letters;2023-11-13

4. Ternary Output Binary Neural Network With Zero-Skipping for MRAM-Based Digital In-Memory Computing;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-07

5. MRAM-Based Cache System Design and Policy Optimization for RISC-V Multi-Core CPUs;IEEE Transactions on Magnetics;2023-06

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