CuAl intermetallic compound for Cu alternative-Reference-Cited by-同舟云学术

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CuAl intermetallic compound for Cu alternative

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)
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Author:

Kuge Toshihiro¹,Yahagi Masataka²,Koike Junichi¹

Affiliation:

1. Tohoku University,Department of Materials Science,Sendai 980-8572,Japan

2. JX Nippon Mining & Metals Corporation,Tokyo 105-8417,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10154618/10154586/10154850.pdf?arnumber=10154850

Reference10 articles.

1. CuAl2 thin films as a low-resistivity interconnect material for advanced semiconductor devices

2. Potential of low-resistivity Cu2Mg for highly scaled interconnects and its challenges

3. NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cu1−xAlx films as alternatives to copper for advanced interconnect metallization;Journal of Vacuum Science & Technology B;2024-06-18

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