Characterization of SRAM sense amplifier input offset for yield prediction in 28nm CMOS-Reference-Cited by-同舟云学术

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Characterization of SRAM sense amplifier input offset for yield prediction in 28nm CMOS

Published:2011-09 Issue: Volume: Page:
ISSN:
Container-title:2011 IEEE Custom Integrated Circuits Conference (CICC)
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Author:

Abu-Rahma Mohamed H.,Chen Ying,Sy Wing,Ong Wee Ling,Ting Leon Yeow,Yoon Sei Seung,Han Michael,Terzioglu Esin

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6045019/6055276/06055315.pdf?arnumber=6055315

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A capacitor-coupled stacked-based sense amplifier with enhanced offset tolerance for low power SRAM;IEICE Electronics Express;2023-12-25

2. A Single-Ended Offset-Canceling Sense Amplifier Enabling Wide-Voltage Operations;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-03

3. A Common Mode Insensitive Process Tolerant Sense Amplifier Design for In Memory Compute Applications in 65nm LSTP Technology;2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID);2023-01

4. Application-aware aging analysis and mitigation for SRAM Design-for-Relability;Microelectronics Reliability;2022-07

5. A Dual-Domain Dynamic Reference Sensing for Reliable Read Operation in SOT-MRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-05

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