Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the “Green Gap” Range
Author:
Affiliation:
1. College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
2. Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing, China
Funder
National Science Foundation of China
Strategic Priority Research Program of Chinese Academy of Sciences
Fundamental Research Funds for the Central Universities
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/9668973/09878119.pdf?arnumber=9878119
Reference33 articles.
1. Study and optimization of characteristics of GaN based quantum well light emitting diode
2. Band parameters for nitrogen-containing semiconductors
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5. Recent progress in red light-emitting diodes by III-nitride materials
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