Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS-Reference-Cited by-同舟云学术

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Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS

Published:2022 Issue: Volume:10 Page:49154-49166
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Rizzo Tommaso¹^ORCID,Strangio Sebastiano¹^ORCID,Iannaccone Giuseppe¹^ORCID

Affiliation:

1. Department of Information Engineering, University of Pisa, Pisa, Italy

Funder

EC Horizon 2020 Research and Innovation Programme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09767835.pdf?arnumber=9767835

Reference52 articles.

1. A Highly Scalable Single Poly-Silicon Embedded Electrically Erasable Programmable Read Only Memory With Tungsten Control Gate by Full CMOS Process

2. A Highly Linear Neuromorphic Synaptic Device Based on Regulated Charge Trap/Detrap

3. A Bit-by-Bit Re-Writable Eflash in a Generic 65 nm Logic Process for Moderate-Density Nonvolatile Memory Applications

4. Embedded Analog Nonvolatile Memory With Bidirectional and Linear Programmability

5. A floating-gate memory cell for continuous-time programming

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1. Polycrystalline-Silicon CMOS Thin-Film Transistors With T-Shaped Gate and Lightly Doped Drain;IEEE Transactions on Electron Devices;2024-09

2. Layout-Aware Area Optimization of Transposable STT-MRAM for a Processing-In-Memory System;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-02

3. The case for hybrid analog neuromorphic chips based on silicon and 2D materials;2023 International Electron Devices Meeting (IEDM);2023-12-09

4. Ferroelectric FET-Based Time-Mode Multiply-Accumulate Accelerator: Design and Analysis;IEEE Transactions on Electron Devices;2023-12

5. A Novel Word Line Driver Circuit for Compute-in-Memory Based on the Floating Gate Devices;Electronics;2023-03-01

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