Polycrystalline-Silicon CMOS Thin-Film Transistors With T-Shaped Gate and Lightly Doped Drain
Author:
Affiliation:
1. Institute of Electronics, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan
2. High-Frequency Technology Division, Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan
Funder
National Science and Technology Council, R.O.C
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/16/10645717/10634115.pdf?arnumber=10634115
Reference29 articles.
1. High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications
2. A Hybrid Wide Drain Poly-Si FinTFT for RF Application
3. Nonvolatile Poly-Si TFT Charge-Trap Flash Memory With Engineered Tunnel Barrier
4. Temperature Coefficient of Poly-Silicon TFT and its Application on Voltage Reference Circuit With Temperature Compensation in LTPS Process
5. Characteristics of a Smiling Polysilicon Thin-Film Transistor
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