Si/InP Heterogeneous Integration Techniques from the Wafer-Scale (Hybrid Wafer Bonding) to the Discrete Transistor (Micro-Transfer Printing)-Reference-Cited by-同舟云学术

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Si/InP Heterogeneous Integration Techniques from the Wafer-Scale (Hybrid Wafer Bonding) to the Discrete Transistor (Micro-Transfer Printing)

Published:2018-10 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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Author:

Carter Andrew D.,Urteaga Miguel E.,Griffith Zachary M.,Lee Kang-Jin,Roderick Jonathan,Rowell Petra,Bergman Joshua,Hong Sankgi,Patti Robert,Petteway Carl,Fountain Gill,Ghosel Kanchan,Bower Christopher A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8636845/8640128/08640196.pdf?arnumber=8640196

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterojunction bipolar transistors for sub-THz applications;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. Introduction to 5G applications and beyond;New Materials and Devices Enabling 5G Applications and Beyond;2024

3. Micro-transfer printing of thick optical components using a tether-free UV-curable approach;Journal of Optical Microsystems;2023-11-29

4. Approaches to Heterogeneous Integration for Millimeter-Wave Applications;Journal of the Russian Universities. Radioelectronics;2023-09-29

5. Sub-THz III-V on Si technologies for 6G electronics;2022 14th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2022-05-18

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