Heterojunction bipolar transistors for sub-THz applications
Reference41 articles.
1. InP/GaAsSb double heterojunction bipolar transistor emitter-fin technology with f MAX=1.2 THz;Arabhavi;IEEE Transactions on Electron Devices,2022 2. Bolognesi, C.R., Matine, N., Xu, X., Dvorak, M. W., Watkins, S.P., & Thewalt, M.L.W. (1998). Low-offset NpN InP-GaAsSb-InP double heterojunction bipolar transistors with abrupt interfaces and ballistically launched collector electrons. In: 56th annual device research conference digest (Cat. No.98TH8373) (pp. 30–31). Charlottesville, VA, USA. Available from https://doi.org/10.1109/DRC.1998.731108. 3. Bouhouche, M., Latreche, S., & Gontrand, C. (2009). Effect of implantation defects and carbon incorporation on Si/SiGe bipolar characteristics. In: 2009 International conference on computer and electrical engineering, ICCEE 2009 (Vol. 2, pp. 201–204). Algeria. Available from https://doi.org/10.1109/ICCEE.2009.180. 4. Carter, A. D., Urteaga, M. E., Griffith, Z. M., Lee, K. J., Roderick, J., Rowell, P., Bergman, J., Hong, S., Patti, R., Petteway, C., Fountain, G., Ghosel, K., & Bower, C. A. (2019). Si/InP heterogeneous integration techniques from the wafer-scale (hybrid wafer bonding) to the discrete transistor (micro-transfer printing). In: 2018 IEEE SOI-3D-subthreshold microelectronics technology unified conference, S3S 2018. United States: Institute of Electrical and Electronics Engineers Inc. Available from https://doi.org/10.1109/S3S.2018.8640196, http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=8636845. 5. Carter A.D., Urteaga M.E., Rowell P., Bergman J., & Arias A. (2019). Microtransfer-printed InGaAs/InP HBTs utilizing a vertical metal sub-collector contact. In: 2019 device research conference (DRC) (pp. 45–46). Ann Arbor, MI, USA. Available from https://doi.org/10.1109/DRC46940.2019.9046426.
|
|