A Fault Detection Method for Partial Chip Failure in Multichip IGBT Modules Based on Turn-Off Delay Time-Reference-Cited by-同舟云学术

A Fault Detection Method for Partial Chip Failure in Multichip IGBT Modules Based on Turn-Off Delay Time

Published:2022-06 Issue:6 Volume:69 Page:3319-3327
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Luo Dan¹^ORCID,Chen Minyou¹^ORCID,Lai Wei¹^ORCID,Xia Hongjian¹,Li Hanrui¹,Yu Kai²

Affiliation:

1. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China

2. CRRC Yong Ji Electric Company, Ltd., Shanxi Yongji, Shanxi, China

Funder

Shanxi Provincial Department of Science and Technology

National Key Research and Development Program of China

National Science Fund Subsidized Project

National “111” Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09766026.pdf?arnumber=9766026

Reference22 articles.

1. Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge

2. Monitoring Bond Wire Defects of IGBT Module Using Module Transconductance

3. A real-time aging monitoring method of parallel-connected IGBT modules

4. Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating

5. A novel on-line method for monitoring the junction temperature of SiC MOSFET based on threshold voltage;zhang;Proc CSEE,2020

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