Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan
Funder
Japan Society for the Promotion of Science (JSPS) through JSPS KAKENHI, Japan
Japan Science and Technology Agency (JST) Core Research for Evolutional Science and Technology (CREST), Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. High endurance strategies for hafnium oxide based ferroelectric field effect transistor
2. Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance
3. Re-examination of Vth window and reliability in HfO? FeFET based on the direct extraction of spontaneous polarization and trap charge during memory operation;ichihara;IEEE Symp VLSI Tech,2020
4. Compact modeling of multidomain ferroelectric FETs: Charge trapping, channel percolation, and nucleation-growth domain dynamics;xiang;IEEE Trans Electron Device,2018
5. Device modeling of ferroelectric memory field-effect transistor (FeMFET)
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