A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA, USA
2. Gallium Nitride Technology Center, Mitsubishi Chemical Corporation, Ushiku, Ibaraki, Japan
Funder
ARPA-E SWITCHES Extension Program monitored
Isik Kizilyalli
ONR managed
Lynn Petersen
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9839401/09825646.pdf?arnumber=9825646
Reference31 articles.
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4. Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities
5. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
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