Impact of N<sub>2</sub>O Plasma Reactant on PEALD-SiO<sub>2</sub> Insulator for Remarkably Reliable ALD-Oxide Semiconductor TFTs-Reference-Cited by-同舟云学术

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Impact of N₂O Plasma Reactant on PEALD-SiO₂ Insulator for Remarkably Reliable ALD-Oxide Semiconductor TFTs

Published:2022-06 Issue:6 Volume:69 Page:3199-3205
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Dong-Gyu¹,Yoo Kwang Su¹,Kim Hye-Mi¹,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, Seoul, Republic of Korea

Funder

Ministry of Trade, Industry & Energy (MOTIE), South Korea, through the Industry Technology Research and Development Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09766024.pdf?arnumber=9766024

Reference38 articles.

1. Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

2. Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping

3. Oxygen defect-induced metastability in oxide semiconductors probed by gate pulse spectroscopy;lee;Sci Rep,2015

4. Effect of N[sub 2]O Plasma Treatment on the Performance of ZnO TFTs

5. A Study on the Electrical Properties of Atomic Layer Deposition Grown InOxon Flexible Substrates with Respect to N2O Plasma Treatment and the Associated Thin-Film Transistor Behavior under Repetitive Mechanical Stress

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. N2O recovery from wastewater and flue gas via microbial denitrification: Processes and mechanisms;Science of The Total Environment;2024-10

2. Fully atomic layer deposition induced InAlO thin film transistors;Vacuum;2024-09

3. Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition;Applied Surface Science;2024-08

4. Facile routes to enhance doping efficiency using nanocomposite structures for high-mobility and stable PEALD-ITGO TFTs;Applied Surface Science;2024-08

5. Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices;Chemistry of Materials;2024-02-26

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