A Threshold Voltage Definition Based on a Standardized Charge Versus Voltage Relationship

Author:

Takeuchi Kiyoshi1ORCID,Kobayashi Masaharu2ORCID,Hiramoto Toshiro1ORCID

Affiliation:

1. Institute of Industrial Science, The University of Tokyo, Meguro-ku, Tokyo, Japan

2. Institute of Industrial Science and the System Design Research Center (d.lab), Department of Engineering, The University of Tokyo, Meguro-ku, Tokyo, Japan

Funder

commissioned by the New Energy and Industrial Technology Development Organization (NEDO), Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-05

2. Investigation of Threshold Voltage Definition for Nanosheet MOSFETs by Using Quantum Drift Diffusion Model;IEEJ Transactions on Electronics, Information and Systems;2024-02-01

3. Effects of Quantum Confinement on Charge-Based Threshold Voltage Definition;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11

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