Investigation of Threshold Voltage Definition for Nanosheet MOSFETs by Using Quantum Drift Diffusion Model
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Published:2024-02-01
Issue:2
Volume:144
Page:82-87
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ISSN:0385-4221
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Container-title:IEEJ Transactions on Electronics, Information and Systems
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language:en
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Short-container-title:IEEJ Trans. EIS
Author:
Takanishi Ryo1, Hiroki Akira1
Affiliation:
1. Graduate School of Science and Technology, Kyoto Institute of Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Reference19 articles.
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