Performance of a Novel Rear-Triggered 4H-SiC Photoconductive Semiconductor Switch-Reference-Cited by-同舟云学术

Performance of a Novel Rear-Triggered 4H-SiC Photoconductive Semiconductor Switch

Published:2023-02 Issue:2 Volume:70 Page:627-632
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Feng Zhuoyun¹^ORCID,Luan Chongbiao¹^ORCID,Xiao Longfei²^ORCID,Li Yangfan²^ORCID,Sha Huiru²,Sun Xun²,Chen Xiufang²,Xu Xiangang²,Li Hongtao¹

Affiliation:

1. Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, China

2. State Key Laboratory of Crystal Materials and the Institute of Novel Semiconductors, Shandong University, Jinan, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/09992256.pdf?arnumber=9992256

Reference17 articles.

1. Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch

2. Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches

3. Contact Extensions Over a High-k Dielectric Layer for Surface Field Mitigation in High Power 4H-SiC Photoconductive Switches

4. Performance and characterization of a 20 kV, contact face illuminated, silicon carbide photoconductive semiconductor switch for pulsed power applications;mauch;Proc Abstr IEEE Int Conf Plasma Sci (ICOPS),2013

5. Performance Modeling of Silicon Carbide Photoconductive Switches for High-Power and High-Frequency Applications

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Response to Electro-Optical Control of Diamond Based Non-Volatile Photo-Switch;IEEE Electron Device Letters;2024-08

2. A Backward-Triggered 4H-SiC Photoconductive Semiconductor Switch With Planar Electrode Structure;IEEE Transactions on Electron Devices;2024-07

3. High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate;Journal of Applied Physics;2024-06-17

4. Design of a lateral photoconductive semiconductor switch with a low resistivity region on semi-insulating GaN to enhance breakdown characteristics;Optics Communications;2024-03

5. Low ON-Resistance and High Peak Voltage Transmission Efficiency Based on High-Purity 4H-SiC Photoconductive Semiconductor Switch;IEEE Transactions on Power Electronics;2024-02