Low ON-Resistance and High Peak Voltage Transmission Efficiency Based on High-Purity 4H-SiC Photoconductive Semiconductor Switch
Author:
Affiliation:
1. Institute of Novel Semiconductors and the State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
2. Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, China
Funder
Key Research and Development Program of Shandong
Natural Science Foundation of Shandong Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10368210/10268393.pdf?arnumber=10268393
Reference21 articles.
1. Performance of a Novel Rear-Triggered 4H-SiC Photoconductive Semiconductor Switch
2. Breakdown and Photoconductivity Enhancement by Mixed Reflective Al-Doped ZnO/Ag Electrode in Vertical SiC Photoconductive Switch
3. High Power Lateral Silicon Carbide Photoconductive Semiconductor Switches and Investigation of Degradation Mechanisms
4. All solid-state electromagnetic pulse simulator based on the 4H-SiC photoconductive semiconductor switch
5. Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Donor–Acceptor Compensation on Transient Performance of Vanadium-Doped SiC Photoconductive Switches Using 532-nm Laser;IEEE Transactions on Electron Devices;2024-07
2. Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches;IEEE Journal of the Electron Devices Society;2024
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