First Principle Study of Spin Tunneling Current Under Field Effect in Magnetic Tunnel Junction for Possible Application in STT-RAM
Author:
Affiliation:
1. Department of Electronics and Communication, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, India
Funder
Council of Scientific and Industrial Research (CSIR)-Human Resource Development Group (HRDG), New Delhi, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09834318.pdf?arnumber=9834318
Reference45 articles.
1. Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction
2. Special points for Brillouin-zone integrations
3. First Principles Modeling of Tunnel Magnetoresistance ofFe/MgO/FeTrilayers
4. Layer KKR approach to Bloch-wave transmission and reflection: Application to spin-dependent tunneling
5. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches
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