Synergistic Effect of Electrical Stress and Neutron Irradiation on Silicon Carbide Power MOSFETs-Reference-Cited by-同舟云学术

Synergistic Effect of Electrical Stress and Neutron Irradiation on Silicon Carbide Power MOSFETs

Published:2022-06 Issue:6 Volume:69 Page:3341-3346
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yue Shaozhong¹^ORCID,Chen Ziwen²^ORCID,Zhang Zhangang²^ORCID,Hong Zhang²,Zhu Tian¹^ORCID,Peng Chao²^ORCID,Zheng Xuefeng¹^ORCID,Lei Zhifeng²

Affiliation:

1. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

Funder

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09769747.pdf?arnumber=9769747

Reference35 articles.

1. Geant4 simulation of neutron displacement damage in SiC;guo;Atomic Energy Science and Technology,2013

2. Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs

3. Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes

4. Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors

5. Lifetime-limiting defects in n− 4H-SiC epilayers

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2. Neutron irradiation influence on high-power thyristor device under fusion environment;Nuclear Science and Techniques;2024-04

3. Radiation-induced degradation of silicon carbide MOSFETs – A review;Materials Science and Engineering: B;2024-02

4. Evaluation of Neutron Radiation Impact for 1200-V Class 4H-SiC MOSFET at Gate Switching Mode With TCAD Simulation;IEEE Transactions on Nuclear Science;2023-08