Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact-Reference-Cited by-同舟云学术

Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact

Published:2022-03 Issue:3 Volume:69 Page:910-914
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kang Seok Jung¹,Kim Jang Hyun²^ORCID,Song Young Suh³^ORCID,Go Seungwon¹^ORCID,Kim Sangwan¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Ajou University, Suwon, Republic of Korea

2. School of Electrical Engineering, Pukyong National University, Busan, Republic of Korea

3. Department of Electrical and Computer Engineering (ECE), Inter-University Semiconductor Research Center (ISRC), Seoul National University (SNU), Seoul, Republic of Korea

Funder

National Research Foundation (NRF) of Korea

Ministry of Science and ICT

2022 research fund of Korea Military Academy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09684028.pdf?arnumber=9684028

Reference28 articles.

1. Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

2. Temperature dependence of hot carrier effects in short-channel Si-MOSFETs

3. The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films

4. Self-heating effect in FinFETs and its impact on devices reliability characterization

5. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

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