Self-heating effect in FinFETs and its impact on devices reliability characterization-Reference-Cited by-同舟云学术

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Self-heating effect in FinFETs and its impact on devices reliability characterization

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Reliability Physics Symposium
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Author:

Liu S. E.,Wang J. S.,Lu Y. R.,Huang D. S.,Huang C. F.,Hsieh W. H.,Lee J. H.,Tsai Y. S.,Shih J. R.,Lee Y.-H.,Wu K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6850132/6860565/06860642.pdf?arnumber=6860642

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of T-Gate and Π-Gate HEMT Through Cellular Monte Carlo Simulations;IEEE Transactions on Electron Devices;2023-12

2. Transistor Self-Heating-Aware Synthesis for Reliable Digital Circuit Designs;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-12

3. Impact of Bottom Dielectric Isolation of Si-Stacked Nanosheet Transistor on Stress and Self-Heating at 3-nm Node and Beyond;IEEE Transactions on Electron Devices;2023-11

4. Study of voltage margin of Gate oxide TDDB between AC and DC stress;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24

5. Device-Level Thermal Management in Multifin SOI-FinFET Through Fin Pitch Design Employing Cooperative Game Theory;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-06

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