Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition-Reference-Cited by-同舟云学术

Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Published:2023-03 Issue:3 Volume:70 Page:1067-1072
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liang Yan-Kui¹^ORCID,Lin Jing-Wei²,Peng Li-Chi¹,Hua Yi Miao¹,Chou Tsung-Te³,Kei Chi-Chung³,Lu Chun-Chieh⁴,Huang Huai-Ying⁴,Yeong Sai Hooi⁴,Lin Yu-Ming⁴^ORCID,Liu Po-Tsun⁵^ORCID,Chang Edward-Yi²^ORCID,Lin Chun-Hsiung¹

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. National Applied Research Laboratories, Taiwan Instrument Research Institute, Hsinchu, Taiwan

4. Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan

5. Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Taiwan Semiconductor Manufacturing Company

National Science and Technology Council (NSTC), Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10004843.pdf?arnumber=10004843

Reference32 articles.

1. All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process

2. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

3. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

4. High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

5. Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

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