All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process-Reference-Cited by-同舟云学术

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All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process

Published:2019-12 Issue:6 Volume:37 Page:060910
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Lee Jeong-Mu¹²,Lee Hwan-Jae¹,Pi Jae-Eun¹,Yang Jong-Heon¹,Lee Jeong Hun¹,Ahn Seong-Deok¹,Kang Seung-Youl¹,Moon Jaehyun¹²^ORCID

Affiliation:

1. Flexible Electronics Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Republic of Korea

2. Department of Advanced Device Engineering, University of Science and Technology, Daejeon 34113, Republic of Korea

Funder

Ministry of Sci. and ICT, Rep. of Korea

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5119937

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-mobility and high-reliability Zn-incorporated amorphous In₂O₃-based thin-film transistors;Japanese Journal of Applied Physics;2024-07-01

2. Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices;Chemistry of Materials;2024-02-26

3. Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition;IEEE Transactions on Electron Devices;2023-03

4. Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook;International Journal of Extreme Manufacturing;2023-02-03

5. Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications;Journal of the Society for Information Display;2022-01-11

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